iGaNPower designed a first 1200V E-Mode GaN HemT
1200V GaNFET in DFN8x8 Package – GaNPower
ULTRA-LOW LOSS 600V– 1200V GAN POWER TRANSISTORS FOR HIGH EFFICIENCY APPLICATIONS
NexGen Vertical GaN® | Gallium Nitride (GaN) Semiconductor | Power Device - NexGen Power Systems
Enkris' demonstrates CMOS-compatible high-voltage GaN-on-Si HEMT epi reaches 300mm
Bosch to develop 1200V GaN process for automotive ...
Industry's first 1200V Half Bridge Module based on GaN technology
1200V GaN-based Power Modules from VisIC and TSMC - New Industry Products
1200V Rating Achieved on Vertical GaN Power Devices - Power Electronics News
SiC and GaN Semiconductors | DigiKey
Design Considerations with GaN & SiC - Power Electronics News
SiC in Stock: 1200V, 21mΩ Baseplate-less SiC Six-Pack Module in Industry-Standard Footprint – GaN & SiC Tech Hub
![4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram](https://www.researchgate.net/publication/316082422/figure/fig3/AS:668200039612418@1536322712314/Market-positioning-of-SiC-and-GaN-Power-devices-17.jpg "4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram")
4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram
Transphorm to Demo 99% Efficiency Power Switching Using GaN Power Transistor at ISPSD 2022 - EE Times Asia
Industry's first 1200V Half Bridge Module based on GaN technology
Transphorm 1200V GaN Fet delivers 99% Efficient Switching - News
.jpg "트랜스폼, 99% 효율의 1200V GaN 트랜지스터 시연")
트랜스폼, 99% 효율의 1200V GaN 트랜지스터 시연
VisIC Technologies Partners With TSMC to Offer Industry's Most Advanced 1200V GaN-based Power Device Solutions
Breakthrough result could pave way for GaN to enter into the SiC high voltage domain
NexGen Vertical GaN® | Gallium Nitride (GaN) Semiconductor | Power Device - NexGen Power Systems
Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V | imec
Wolfspeed 1200V & 1700V Half-Bridge SiC Modules Designed for Ultra-High Power Density – GaN & SiC Tech Hub
1200V GaN-on-Si reaches 300mm wafers ...
1200V GaN FET for 99% efficiency ...
ULTRA-LOW LOSS 600V– 1200V GAN POWER TRANSISTORS FOR HIGH EFFICIENCY APPLICATIONS
VisIC Launches 1200 V GaN Devices | Electronics360
