LMG1210 200Vハーフブリッジ・MOSFETとGaN FETドライバ - TI | Mouser
東芝，GaN-MOSFETの信頼性を向上するプロセスを開発 | OPTRONICS ONLINE オプトロニクスオンライン
量産対応で、最大10kWのアプリケーションを サポートする600V GaN FET製品ポートフォリオを発表 | news.tij.co.jp
SiCおよびGaN半導体 | DigiKey
First' quasi-vertical gallium nitride trench MOSFET on six-inch silicon
GaN-HEMTの特徴 | 半導体製品 | 新電元工業株式会社- Shindengen
GaN power devices, Part 1: Principles
業界最小の＋100V耐圧GaN FET、EPCがサーバー向け | 日経クロステック（xTECH）
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
Market analysis: "Who really requires GaN & SiC power devices ?"
Rad-tolerant GaN FET handles 15 A, 900 V - Power Electronic Tips
Cross-sectional schematic of normally-off GaN MOSFET with p-GaN... | Download Scientific Diagram
Model for Gate Capacitance of trench GaN Mosfet
GaN FETの特性：GaNパワー半導体入門（2）（1/4 ページ） - EDN Japan
PowerUP EXPO 2021: Fundamentals of GaN and SiC power devices
GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser
GaN FETs: The Technology of Choice for Audiophiles - Power Electronics News
GaN FET vs. MOSFET: 150 V – 12 V DC-DC Conversion - YouTube
GaN | Nexperia
How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
How GaN FETs Have Become the Technology of Choice for Audiophiles - Technical Articles
900V 170mΩ Gallium Nitride (GaN) FET - Transphorm | Mouser
GaN transistor characteristics at elevated temperatures: Journal of Applied Physics: Vol 106, No 7
GaN power devices: Perfecting the vertical architecture - News
High-speed GaN FET driver switches at 40 MHz - Power Electronic Tips
How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
GAN063-650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET | Nexperia
