Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits
GaN-on-GaN power device design and fabrication - ScienceDirect
1200 V GaN Vertical Fin Power Field-Effect Transistors
avogy-substrate-674x309 - NexGen Power Systems
Bulk gallium nitride substrate enables 4kV-breakdown vertical diode
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates | Semantic Scholar
Reinventing Power Systems with NexGen Vertical GaN™ | Electronic Design
GaN, SiC, and Si technologies in AC Adapters | TechInsights
Vertical GaN Devices for Power Electronics in Extreme Environments
Hard-switching reliability studies of 1200 V vertical GaN PiN diodes | MRS Communications | Cambridge Core
GaN, SiC, and Si technologies in AC Adapters | TechInsights
Avogy - Crunchbase Company Profile & Funding
Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits
4 reasons why Avogy and FINsix put SiC in their chargers
Is Avogy Inc. dead ?
Vertical power diodes in bulk GaN
The 2018 GaN power electronics roadmap - IOPscience
GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 | Semantic Scholar
Is Avogy Inc. dead ?
What's new with the consumer charger market?
Power GaN device IP dynamics heralds future ramp-up of market
Frontiers | On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications
Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors - News
